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AS5140H
Data Sheet - Electrical Characteristics
6.2 Magnetic Input Specification
6.3 Electrical System Specifications
V
OL
Low level output voltage
VSS+0.4
V
I
O
Output current
VDD5V:4.5V
4
mA
VDD5V:3V
2
Table 9. Tristate CMOS Output: DO
Symbol
Parameter
Conditions
Min
Typ
Max
Units
VOH
High level output voltage
VDD5V-
0.5
V
V
OL
Low level output voltage
VSS+0.4
V
I
O
Output current
VDD5V:4.5V
4
mA
VDD5V:3V
2
I
OZ
Tri-state leakage current
1
礎
Table 10. Electrical Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Magnetic Input Specification (Two-pole cylindrical diametrically magnetized source)
d
mag
Diameter
Recommended magnet: ?6mm x 2.5mm
for cylindrical magnets
4
6
mm
t
mag
Thickness
2.5
B
pk
Magnetic input field amplitude
Required vertical component of the
magnetic field strength on the dies surface,
measured along a concentric circle with a
radius of 1.1mm
45
75
mT
B
off
Magnetic offset
Constant magnetic stray field
?0
mT
Field non-linearity
Including offset gradient
5
%
f
mag_abs
Input frequency (rotational speed of
magnet)
Absolute mode: 600 rpm @ readout of 1024
positions (see Table 19)
10
Hz
f
mag_inc
Incremental mode: no missing pulses at
rotational speeds of up to 10.000 rpm (see
Table 19)
166
Hz
Disp
Displacement Radius
Max. X-Y offset between defined IC
package center and magnet axis (see
Figure 19)
0.25
mm
Max. X-Y offset between chip center and
magnet axis
0.485
Chip placement tolerance
Placement tolerance of chip within IC
package (see Figure 21)
?.235
mm
Recommended magnet material and
temperature drift
NdFeB (Neodymium Iron Boron)
-0.12
%/K
SmCo (Samarium Cobalt)
-0.035
Table 11. Electrical System Specifications
Symbol
Parameter
Conditions
Min
Typ
Max
Units
RES
Resolution
1
0.352 deg
10
bit
Table 8. CMOS Output: A, B, Index, PWM (Continued)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
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